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/4H-SiC formed by thermal oxidationWatanabe, Heiji*; Kirino, Takashi*; Kagei, Yusuke*; Harries, J.; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; et al.
no journal, ,
Channel registibity of SiC-MOSFETs becomes larger with decreasing carrier mobility due to defects in the SiO/SiC interface. Although channel mobility is larger than that of 4H-SiC(0001)Si face in the MOSFET fabricated on the 4H-SiC(000-1)C face, degradation of reliability for an oxide layer is remarkable. Valence band off-set and interface level density of the SiO/SiC interface are different from the former 4H-SiC(0001)Si face. Physical origins for these characters has not known yet. Thus, in order to make clear the origin of reliability degradation and interface characteristics of (000-1)C face, the energy band structure and chemical bonding states of the SiO/SiC interface formed by thermal oxidation.
Suemitsu, Maki*; Takahashi, Ryota*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
The up-to-date industrial fabrication method of graphene is a epitaxial graphene method, in which graphene layers are formed on the SiC substrate after thermal annealing in the vacuum condition. This method, however, has a large disadvantage, that is, an SiC bulk substrate with a large size diameter is not available with low prices. We have succeeded to make graphene on the Si substrate by thermal annealing of a 3C-SiC ultra-thin layer (80-100 nm) formed epitaxially on the Si substrate in the vacuum conditions (Graphene-On-Silicon;GOS). In this study, in order to make clear mechanisms of the GOS formation processes, low energy electron diffraction (LEED) and X-ray photoemission spectroscopy (XPS) have been applied to observe surface structures. Consequently, graphene formation processes from the 3C-SiC(111) layer on the Si(111) substrate has been found to be same as those on the 6H-SiC(0001) substrate.